Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks

MOCVD growth of GaN-based high electron mobility transistor structures

Interaction of Oxygen with Threading Dislocations in GaN

A review is given of the results of first principles calculations used to investigate the structures and electronic properties of screw and edge dislocations in GaN. The atoms at the core of the full core screw dislocation possess heavily strained bonds leading to deep gap states. Removing the first shell of Ga and N atoms gives a screw dislocation with a small open core consisting of f10 10g t...

A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15....

Electron scattering due to threading edge dislocations in n-type wurtzite GaN

The effect of electrically active VGa–ON threading edge dislocations on drift and Hall mobilities in n-type epitaxial wurtzite WZ GaN is investigated theoretically. The charge distribution along the dislocation core is first obtained by means of a density-functional theory atomistic calculation; the two N atoms near the missing Ga atom at the dislocation core are found to be electron acceptors....